| 04.06.2014 10:45 |
Practical Dual Pack in Volume Production: Infineon TLE4966V Hall Sensor with Two Vertical Hall Plates Measures Rotation Speed and Direction |
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Neubiberg and Nuremberg, Germany – June 4, 2014 – In the future, power window lift and power trunk lift system design will be completely transformed; other automotive applications with space restrictions, such as sun roofs and seat adjustment, will also benefit. ... |
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| 20.05.2014 10:15 |
Infineon presents Slew Rate Control EiceDRIVER™ – Developed for the most demanding industrial applications up to 1200 V |
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Neubiberg, May 20, 2014 – At this year's PCIM trade fair Infineon Technologies AG will present for the first time the single channel gate driver of the latest EiceDRIVERTM product family, developed especially for high-end systems in the industrial sector. The type 1EDS20I12SV EiceDRIVER™ Safe driver... |
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| 16.05.2014 11:15 |
Infineon Extends Life Time of IHM-B Modules: High Power Semiconductors Now Last Up to 11 Times Longer |
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Neubiberg, May 16, 2014 – In the future it will be possible to use IGBT High Power Modules (IHM) from Infineon Technologies AG even longer. More robust construction and greatly improved thermal conductivity behavior increase the average life time in comparison to previous models by a factor of up to... |
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| 15.05.2014 13:15 |
ThinPAK 5x6 Brings Smallest CoolMOS™ MOSFETs Ever into Adapters, Consumer Electronics and Lighting Applications |
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Neubiberg, Germany – May 15, 2014 – Infineon Technologies today introduces a new leadless surface mounted (SMD) package for CoolMOS™ MOSFETs named ThinPAK 5x6.
Chargers for mobile devices, Ultra High Definition TVs and LED lighting all have to meet numerous conflicting requirements. Consumers long ... |
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| 15.05.2014 10:15 |
Infineon Extends its Portfolio of Reverse Conducting IGBTs with a 650V Class Device – RC-H5 Reduces Switching Losses by 30 Percent Enabling Greater Energy Efficiency |
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Neubiberg, May 15, 2014 - Infineon Technologies AG has extended the latest generation of reverse conducting IGBTs (Insulated Gate Bipolar Transistors) for resonant applications with a new 650V component including a monolithically integrated RC diode. This means the high performance RC-H5 family of ... |
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| 06.05.2014 13:15 |
Infineon begins to reap the fruits of its development of 300 millimeter technology: future investments ratio targeted at about 13 percent of sales compared to about 15 percent so far |
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Neubiberg, May 6, 2014 With effect from the 2015 fiscal year, Infineon Technologies AG intends to reduce its target ratio of investments to revenue over the cycle from the current about 15 percent to about 13 percent. ... |
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