Press Releases 1075 to 1080 of 1640
23.05.2013 13:40 Infineon Ships Security Chips to Taiwan’s Electronic Passport Program
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is supplying security chips to Taiwan’s electronic passport program. Infineon is the only supplier and has started shipping security chips of the SLE78 product family based on the digital ...
23.05.2013 13:10 Infineon presents high-performance LNA for Global Navigation Satellite Systems; BGA825L6S increases satisfaction of smartphone users
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced BGA825L6S, a highly cost-effective Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS). It features an ultra-low noise figure, high linearity, ...
22.05.2013 10:10 Infineon Enables Faster and More Cost-Effective Realization of ASIL C/D Designs for Hybrid and Electric Vehicle Subsystems; Announces Early Samples of EiceDRIVER™ SIL and EiceDRIVER™ Boost IGBT Drivers
Neubiberg, Germany - May 22, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). ...
14.05.2013 10:10 Infineon Introduces New TO-Leadless Package – Designed for High Current Applications up to 300A
Neubiberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS MOSFET generation for applications...
14.05.2013 10:10 Infineon Showcases 650V TRENCHSTOP™ 5 – Performance of Best-in-Class IGBT Gains High Customer Demand
Neubiberg, Nuremberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) highlights its 650V TRENCHSTOP™ 5 at the PCIM Europe 2013 in Nuremberg. Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar Transistor) in the autumn of 2012, the TRENCHSTOP™ 5...
14.05.2013 10:10 Infineon Introduces EconoDUAL™ 3 Power Modules with Automotive Qualification, Offering Both Highest Power Density and Reliability
Neubiberg / Nuremberg, Germany – May 14, 2013 – At PCIM Europe 2013 in Nuremberg (May 14-16, 2013), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches its new EconoDUAL™ 3 IGBT modules, which are fully qualified according to automotive standards. The new offering addresses demanding applications...
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