| 10.07.2009 10:20 |
Infineon announces the planned launch of a rights issue for up to Euro 725 million in gross proceeds, backstopped by investment firm Apollo |
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Neubiberg, Germany – July 10, 2009 – Today Infineon Technologies AG announced plans to launch a rights issue of up to 337 million shares with a subscription price of Euro 2.15 per share. Subject to the required prospectus approval by the German federal Financial Supervisory Authority (BaFin)... |
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| 07.07.2009 22:10 |
Infineon to sell Wireline Communications Business to U.S. Investor |
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Neubiberg, Germany – July 7, 2009 – Infineon Technologies AG announces it has agreed to sell its Wireline Communications (WLC) business to an affiliate of U.S. based investor Golden Gate Capital for Euro 250 million. The contracts were signed today. This transaction means Infineon will focus in future... |
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| 25.06.2009 15:45 |
Infineon Technologies raises guidance for third quarter financials |
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Neubiberg, Germany - June 25, 2009 - Infineon Technologies today raised the guidance for the third quarter of the 2009 fiscal year. For the current third quarter of the 2009 fiscal year Infineon now expects a Combined Segment Result approaching break-even with revenues increasing by a low-teens ... |
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| 19.06.2009 14:15 |
Infineon Announces Availability of OptiMOS 3 75V MOSFET Family with Ideal Characteristics for Energy Efficient Power Conversion Applications |
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Neubiberg, Germany, and Shenzhen, China - June 19, 2009 - At the China Power Show in Shenzhen today, Infineon Technologies (FSE: IFX / OTCQX: IFNNY) announced production availability of its OptiMOS™ 3 75V power MOSFET family. ... |
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| 19.06.2009 14:00 |
Infineon Introduces Next-Generation CoolMOS™ MOSFETs Combining the Benefits of the Superjunction Technology with the Strengths of Conventional High-Voltage Devices |
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Neubiberg, Germany and Shenzhen, China - June 19, 2009 - Today at the China Power Show in Shenzhen, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launched its next-generation 600V CoolMOS™ C6 series of high-performance MOSFETs (metal-oxide semiconductor field-effect transistors). ... |
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| 09.06.2009 15:00 |
Infineon Announces Industry First Dual LDMOS Integrated Power Amplifiers; Ideal for Doherty Architecture and Compact Cellular Amplifier Designs |
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Neubiberg, Germany and Boston - June 9, 2009 - At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced an industry first series of dual integrated LDMOS power amplifiers for wireless network base stations. Incorporating two LDMOS ... |
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