| Press Releases 151 to 156 of 1696 |
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| 14.03.2024 08:30 |
Infineon sues Innoscience for Patent Infringement |
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Munich, Germany – 14 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates (hereinafter: Innoscience). Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon. The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Central District of California. |
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| 13.03.2024 14:15 |
Infineon sets new industry standard for enhanced power density and efficiency with OptiMOS™ 6 200 V MOSFETs |
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Munich, Germany – 13 March 2024 – Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others. Additionally, the combination of a wide safe operating area (SOA) and industry-leading RDS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit. |
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| 12.03.2024 10:15 |
Infineon’s new CoolSiC™ MOSFETs 2000 V offer increased power density without compromising system reliability |
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Munich, Germany – 12 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications. |
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| 05.03.2024 08:15 |
Infineon introduces CoolSiC™ MOSFET G2, the next generation of silicon carbide technology for high-performance systems that drive decarbonization |
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Munich, Germany - March 5, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization. |
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| 01.03.2024 10:15 |
Infineon enhances the TRAVEO™ T2G MCU family with Qt Group graphics solution to enable intelligent rendering technologies |
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Munich, Germany – 1 March 2024 – In the highly competitive global semiconductor market, manufacturers are constantly striving for shorter time-to-market. At the same time, the demand for fluid and high-resolution graphical displays is increasing. To address these market demands, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announces its strategic collaboration with Qt Group, a global software company providing cross-platform solutions for the entire software development lifecycle. This collaboration brings Qt's lightweight, high-performance graphics framework to Infineon's graphics-enabled TRAVEO™ T2G cluster microcontrollers and represents a paradigm shift in graphical user interface (GUI) development. |
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| 29.02.2024 10:15 |
PSoC™ Automotive 4100S Max supports fifth generation CAPSENSE™ technology with higher performance |
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Munich, Germany – 29 February, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched the new Automotive PSoC™ 4100S Max family. This microcontroller device family expands Infineon’s portfolio of CAPSENSE™ enabled Human Machine Interface (HMI) solutions for automotive body/HVAC and steering wheel applications by delivering higher flash densities, GPIOs, CAN-FD, and HW-Security. |
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