Press Releases 1561 to 1566 of 1639
19.07.2006 09:00 Infineon to Enter Ultra-Wideband Market with Industry’s First Dual-Band RF-CMOS Transceiver Core - Paving the Way for the Converged Entertainment Cell Phone
Munich, Germany, July 19, 2006 - Infineon Technologies AG (FSE/NYSE: IFX), a leading provider of communication chips, today announced successful tape-out of a dual-band UWB (Ultra-Wideband) Radio Frequency (RF) transceiver core. Based on the company’s proven low-power CMOS process, this breakthrough ...
17.07.2006 08:00 Infineon Multimedia Platform Selected by LGE for New EDGE Mobile Phones
Munich, Germany - July 17, 2006 - Infineon Technologies AG (FSE/NYSE: IFX) today announced that LG Electronics, Inc. (LGE), Seoul, Korea, has chosen Infineon as phone platform supplier for their new EDGE (Enhanced Data Rates for GSM Evolution) mobile handsets. Beginning with the recent introduction ...
28.06.2006 09:00 Infineon’s automotive electronics business grows faster than the market - Number two position in the global market improved
Munich, June 28, 2006 - According to the latest study from US market research company Strategy Analytics, Boston, the sales growth of 11.9 % posted by Infineon’s automotive electronics business in 2005 means that it has once again significantly outperformed the global market as a whole, which expanded...
22.06.2006 09:00 Infineon launches single chip TV Tuner IC with integrated RF and IF functions that offers lower power consumption, half the footprint area with a superior cost position
Munich, Germany - June 22, 2006 - Infineon Technologies AG (FSE/NYSE: IFX), a leading supplier of TV tuner ICs, introduced today an economic, low power tuner IC, Taifun TUA6039. The TUA6039 integrates the complete RF (Radio Frequency) and IF (Intermediate Frequency) functions on a single chip,...
12.06.2006 15:00 Infineon’s Next-Generation LDMOS Technology for Wireless Infrastructure Power Amplifiers Provides 25 Percent Power Density Increase, Uses High-Performance Plastic Packaging
San Francisco CA - June 12, 2006 - At the MTT International Microwave Symposium here today, Infineon Technologies AG (FSE/NYSE: IFX) introduced its next generation LDMOS (laterally diffused metal-oxide semiconductor) technology.  Used for manufacturing high-power RF (radio frequency)  transistors ...
12.06.2006 15:00 Infineon Drives down 3G Mobile Phone Production Cost and Size, Introduces Industry’s First BAW Filters Using Wafer-Level Packaging
San Francisco CA - June 12, 2006 - At the MTT International Microwave Symposium, Infineon Technologies AG (FSE/NYSE: IFX), a leading provider of communication ICs, announced the extension of its BAW (Bulk Acoustic Wave) filter product portfolio for UMTS/W-CDMA cell phones. The complimentary pair of ...
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