| Press Releases 373 to 378 of 1639 |
 |
| 10.03.2022 10:30 |
Infineon and Sleepiz enable high-precision sleep monitoring at home based on radar technology |
|
Munich, Germany – 10 March 2022 – Billions of people are facing sleep problems. According to scientific research, about one billion people alone suffer from sleep apnea, an interrupted breathing during the night. This is leading to various health consequences including snoring, daytime fatigue, along with more difficult issues such as heart problems and diabetes. Diagnosing sleep apnea is challenging and often includes observing a patient in a sleep laboratory, a stressful situation which can lead to deviating results. |
|
|
| 09.03.2022 10:45 |
Infineon showcases “The future of power” at APEC 2022 in Houston, Texas |
|
Munich, Germany, and San Jose, California – 8 March, 2022 – The future of power will be on display this month in Houston when Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) showcases the industry’s broadest range of power electronics devices during the 2022 Applied Power Electronics Conference (APEC), 20 to 24 March. With a portfolio that includes advanced silicon and wide bandgap materials, engineers rely on Infineon for solutions that are higher-power density, smaller in size, improved performance and enable a greener future. |
|
|
| 03.03.2022 10:45 |
Infineon presents new automotive 750 V EDT2 IGBTs in a TO247PLUS package for discrete traction inverters |
|
Munich, Germany – 3 March, 2022 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the new EDT2 IGBTs in a TO247PLUS package. The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increase the performance and reliability of inverter systems. With the automotive micro-pattern trench-field-stop cell design, the IGBTs are based on a technology that has already been successfully utilized in several inverter modules such as the EasyPACK™ 2B EDT2 or the HybridPACK™. |
|
|
| 28.02.2022 10:15 |
Infineon OptiMOS™ 5 25 V and 30 V solutions in PQFN 2x2 set new form factor, on-state resistance and switching performance standards |
|
Munich, Germany – 28 February, 2022 – Committed to setting new technology standards in discrete power MOSFET technologies, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its new PQFN 2 x 2 mm2 OptiMOS™ 5 25 V and 30 V product family. Combining thin wafer technology and packaging innovation, the new devices enable significant performance benefits in an extremely small form factor. OptiMOS 5 25 V and 30 V have been optimized for synchronous rectification in SMPS (Switched Mode Power Supply) for servers, telecom bricks, portable chargers and wireless charging. The power MOSFET is also designed for electronic speed controls (ESC) for small brushless motors in drones that require smaller form factors and lighter components. |
|
|
| 24.02.2022 10:15 |
Best antenna efficiency: Infineon's new antenna tuners enable the highest data rate, excellent signal quality and longer battery life in 5G smartphones |
|
Munich, Germany – 24 February, 2022 – The number of connected devices is growing rapidly. At the same time, customers expect an ever better user experience in terms of product design and functionality. This poses a major challenge for RF engineers, as antenna design complexity is also constantly increasing due to new features, performance requirements and innovative form factors. In particular, the introduction of 5G brings additional challenges as even more frequency bands need to be covered in a limited space. All of these factors potentially impact antenna performance. |
|
|
| 22.02.2022 10:15 |
Versatile short-circuit protection for power electronics systems: Infineon presents EiceDRIVER™ F3 Enhanced |
|
Munich, Germany – 22 February, 2022 – The highest possible system efficiency is a key requirement for modern power electronics which is driving the development of increasingly higher power densities. However, high system values are at stake should short-circuit events occur. To prevent this and enable systems with the best protection, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its portfolio of isolated EiceDRIVER™ Enhanced gate drivers with the F3 Enhanced (1ED332x) family. The gate driver family implements reliable and versatile protection to prevent destructive short-circuit events. This allows both conventional power switches, such as IGBTs, as well as CoolSIC™ wide-bandgap devices to be protected. The driver family is designed for industrial drives, solar systems, electric vehicle charging, energy storage systems, commercial air conditioning and other applications. |
|
|
| |
««
«
61
62
63
64
65
»
»»
|
|
|
|
|
|
