| Press Releases 61 to 66 of 1639 |
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| 03.06.2024 10:15 |
New industrial CoolSiC™ MOSFETs 650 V G2 in TOLT and Thin-TOLL package increase system power density |
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Munich, Germany – 3 June 2024 – The electronics industry is witnessing a significant shift towards more compact and powerful systems, driven by technological advancements and a growing focus on decarbonization efforts. With the introduction of the Thin-TOLL 8x8 and TOLT packages, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is actively accelerating and supporting these trends. They enable a maximum utilization of the PCB mainboard and daughter cards, while also taking the system’s thermal requirements and space restrictions into account. The company is now expanding its portfolio of CoolSiC™ MOSFET discretes 650 V with two new product families housed in the Thin-TOLL 8x8 and TOLT packages. They are based on the CoolSiC Generation 2 (G2) technology, offering significantly improved figures-of-merit, reliability, and ease-of-use. Both product families specifically target high and medium switching-mode power supplies (SMPS), including AI servers, renewable energy, EV chargers, and large home appliances. |
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| 30.05.2024 18:00 |
Infineon receives building permit for final construction phase of Smart Power Fab in Dresden |
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Dresden, Germany – 30 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is on schedule with the construction of the Smart Power Fab in Dresden and is initiating the final construction phase. During a visit, the Prime Minister of the free state Saxony, Michael Kretschmer, officially handed over the last outstanding building permit for the new fab issued by the State Directorate of Saxony. The excavation of the building pit has now been completed. The shell and building construction are currently progressing on the concrete foundation, which is up to two meters thick. Infineon officially broke ground for the new plant in Dresden in May 2023. Manufacturing is scheduled to start in 2026. The production will focus on semiconductors that promote decarbonization and digitalization. |
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| 29.05.2024 10:15 |
Infineon announces next generation CoolGaN™ Transistor families built on 8-inch foundry processes |
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Munich, Germany – 29 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaNTM devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria). With this, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group. |
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| 28.05.2024 10:15 |
PCIM Europe 2024: Infineon drives decarbonization and digitalization for a greener future with innovative semiconductor solutions |
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Munich, Germany – 28 May 2024 – At PCIM Europe 2024, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will showcase how its latest semiconductor, software, and tooling solutions provide answers to today’s green and digital transformation challenges. Under the motto “Driving decarbonization and digitalization. Together.”, Infineon will demonstrate the industry's broadest power electronics portfolio covering all relevant power technologies in silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). The company will be exhibiting in a larger area this year, with the main booth #740 in Hall 7 demonstrating innovative Si and SiC-based solutions, while the adjacent booth #169 is dedicated to the broad GaN portfolio. Alternatively, visitors can also register for Infineon's digital event platform. |
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| 27.05.2024 10:15 |
Infineon unveils CoolSiC™ MOSFETs 400 V redefining power density and efficiency in AI server power supplies |
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Munich, Germany – 27 May 2024 – With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade. These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) to extend the development of SiC MOSFETs to voltages below 650 V. The company is now launching the new CoolSiC™ MOSFET 400 V family, which is based on the second generation (G2) CoolSiC technology introduced earlier this year. The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings. |
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| 24.05.2024 09:15 |
Infineon announces roadmap for state-of-the-art and energy-efficient power supply units in AI data centers |
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Munich, Germany – 24 May 2024 – The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Today, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers. |
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