Infineon at the Applied Power Electronics Conference & Exposition 2010

Infineon Announces 25V OptiMOS™ Voltage Regulation MOSFET and DrMOS Families Achieving 93 Percent Efficiency in Typical Server Applications

Neubiberg, Germany and Palm Springs, Calif. – February 22, 2010 – Improving the energy efficiency of computing and telecommunications applications, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today at the Applied Power Electronics Conference & Exposition 2010 announced additions to its OptiMOS™ power MOSFET portfolio. Infineon introduced an OptiMOS 25V device family that is optimized for voltage regulation in power supplies for computer servers and telecommunications / data communications switches. The new MOSFETs are also integrated into the TDA21220 DrMOS devices that are compliant with the Intel DrMOS specification. With significant reductions in three critical Figures of Merit (FOM) for efficiency, the new devices reduce MOSFET power losses up to 20 percent and deliver optimized performance across all load conditions. Additionally, higher power density makes it possible to reduce the circuit board footprint of the buck converter by more than 40 percent in a typical power supply. For example, in a 6-phase voltage regulator design, the new 25V OptiMOS devices deliver peak efficiency of 93 percent and greater than 90 percent efficiency across the output current range of 30A to 180A using a 5V gate drive. Device characteristics contributing to this efficiency include the industry’s lowest on-state resistance, lowest gate charge and lowest output capacitance. Infineon believes it is the first power MOSFET supplier to provide devices with all three of these characteristics optimized for efficiency.   According to several market research firms, up to 60 million servers will be in use by 2011. A server consumes an average of 600 W which corresponds to a global consumption of 36 GW. Even a reduction in demand by 1 percent, corresponding to 360 MW, would be equivalent to the capacity of a hydroelectric power station. Additionally, more efficient power supplies have reduced cooling demands, further lowering the electrical energy consumption. “More efficient energy utilization and consequently electricity that we do not use will represent our greatest energy resource in the future and Infineon heavily contributes to these efforts,” said Richard Kuncic, Director, Product Line Low Voltage MOSFETs at Infineon Technologies. “Infineon offers very powerful and efficient MOSFET solu¬tions for applications in industrial, telecommunications, as well as in the consumer and home appliance areas. We set the benchmark for MOSFET performance and are committed to expanding our position as the top supplier of devices to enable the greatest possible energy efficiency in power supplies. With this new 25V OptiMOS series, we are enabling designs that reduce power use and lower costs for our customers.” Power supply designers can use the 25V OptiMOS devices to reduce electricity use, lower thermal load and even shrink the size of their products. These improvements are highly valued by data center operators for several reasons including the fact that the cost of electricity to power servers and provide cooling is the largest single operating budget item in facilities. Reducing the entire system footprint also is highly valued by end-user organizations. Infineon offers the new 25V OptiMOS discretes in three package types; SuperSO8, CanPAK and the exceptionally small S3O8, which measures just 3.3 mm x 3.3 mm. With the S3O8, a 6-phase converter design can be achieved in just 1120 sq mm, a footprint reduction of 45 to 55 percent compared to the other two package types. The new DrMOS device, the TDA21220, is a multi-chip package integrating two new OptiMOS transistors and a driver IC. It features an efficiency that is 2 to 4 percent higher than comparable solutions on the market. The OptiMOS25V products are superior in efficiency relevant Figure of Merits compared to both the low RDS(on)  trench technologies and the ultra low gate charge lateral MOSFET concepts. In a comparison based on the same on-state resistance, the new OptiMOS 25V product offers a 35 percent lower gate charge compared to the next best trench based product and a 50 percent lower output charge compared to the best lateral MOSFET. Availability and Pricing Engineering samples of the 25V OptiMOS family and the TDA21220 DrMOS device are now available. Typical pricing, for a 1 milliOhm 25V OptiMOS device in SuperSO8 package (BSC010NE2LS) is about Euro 1 (US $1.40) in 2k volumes. Pricing for the TDA21220 in 2k quantities start at approximately Euro 1.55 (US $2.17) per piece. Infineon also plans to release 30V versions of the new OptiMOS family in the second calendar quarter of this year. Paired with digital power controllers and other power management products in Infineon’s portfolio, this range of devices will be ideal for notebook computer power supplies meeting both white box and Intel-specified efficiency and performance requirements. Further information Infineon will present its latest power highlights at the “Applied Power Electronics Conference & Exposition 2010” (APEC, February 21-25, 2010, Palm Springs, CA) at Booth #425. Please visit www.infineon.com/apec Further information on Infineon’s power and OptiMOS portfolio is available at www.infineon.com/power and www.infineon.com/optimos Further information on Infineon’s DrMOS products is available at www.infineon.com/dcdc

About Infineon Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2009 fiscal year (ending September), the company reported sales of Euro 3.03 billion with approximately 25,650 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com