Unique Success Story of CoolMOS Technology: Infineon launches 650V MOSFET with Integrated Fast Body Diode and crosses the 3.5 Billionth High-Voltage MOSFET to Advance Energy Efficiency Worldwide

Neubiberg, Germany – February 3, 2011 – On January 19, 2011, the 3.5 billionth CoolMOS™ high-voltage MOSFET came off the production line at the company’s manufacturing facility in Villach, Austria, making Infineon the world’s most successful supplier of these 500 to 900V transistors. Continuous improvement of the chip architecture to ensure constant technological optimization of the CoolMOS™ transistors has paved the way for this success. 55 years after the transistor was invented, Infineon was awarded the Innovation Award of the German Industry in 2002 for its revolutionary CoolMOS™ transistor technology. The high-voltage power transistors raise energy efficiency in an array of applications, such as PC power supplies, servers, solar power inverters, lighting and telecommunications power supplies. These energy-saving chips are now also key components in consumer electronics devices, for instance in flat-screen TVs and games consoles. Using energy efficiently and saving energy are becoming key requirements for all electrically powered industrial or household applications. Infineon’s energy-efficient semiconductor solutions allow saving as much as 25 percent of global power consumption. Thanks to the CoolMOS™ chips a server board for instance needs about 30 Watt less of power. Projected on to around 60 million servers worldwide, energy savings would add up to 1.8 gigawatts, which is equivalent to the output of a nuclear power station. “We have continuously developed the CoolMOS™ transistor technology to maximize the efficiency thus offering our customers a clear competitive edge. We make a decisive contribution to the sustainable conservation of resources for future generations”, said Andreas Urschitz, Vice President & General Manager Power Management and Supply Discretes at Infineon Technologies. “The solar energy harnessing system for the soccer stadium in Kaohsiung, Taiwan, is a fine example of the successful deployment of our CoolMOS™ technology. CoolMOS™ chips in solar inverters ensure the highest possible energy efficiency. Therewith, the solar plant generates 1.1 million kilowatt-hours power and saves about 660 tons CO2 per year.” Next Technology Step is the new 650V CoolMOS™ CFD2 Infineon is now rolling out another important innovation with its latest generation of high-voltage CoolMOS™ MOSFETs. The new 650V CoolMOS™ CFD2 is the world’s first high-voltage transistor with a drain-source voltage of 650V and an integrated fast body diode. The softer commutation behavior and therefore better EMI characteristics give this product a clear competitive advantage. The CoolMOS™ CFD 2 650V product portfolio provides all benefits of fast switching super-junction MOSFETs like better light load efficiency, reduced gate charge, easy implementation and outstanding reliability. Infineon expects the greatest market potential for this transistor to be in solar power inverters, server computers, LED lighting and telecommunications equipment. Further information on the new CFD2 product family is available at www.infineon.com/cfd2 CoolMOS™ technology from Infineon The revolutionary CoolMOS™ power family sets new standards in the field of energy efficiency. As technology leader in high voltage MOSFETs, CoolMOS™ offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS™ products are application specific optimized for consumer products, renewable energy, telecom power supply, adapters and many others. With best-in-class price/performance ratio CoolMOS™ is the ideal solution to meet today’s continuously increasing energy demands. Especially the latest, state-of-the-art generation of high voltage power MOSFETs made it possible that AC/DC power supplies become more efficient, more compact, lighter and cooler than before. This success was achieved by offering the lowest on-state resistance per package outline, the fastest switching speed and the lowest gate driver requirements of high voltage MOSFETs commercially available. Further information is available at www.infineon.com/CoolMOS

About Infineon Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2010 fiscal year (ending September 30), the company reported sales of Euro 3.295 billion with approximately 26,650 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com.