More Discrete Power: Infineon Launches New TO-247PLUS Package Enabling Current Rates of up to 120A
Munich – November 24, 2014 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its discrete IGBT portfolio for high power applications introducing the TO-247PLUS package. The new package enables up to 120A IGBT co-packed with a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. The TO-247PLUS can be used in industrial applications such as UPS, welding, solar, industrial drives as well as automotive applications such as powertrain inverter to upgrade existing designs for higher power output or to improve the thermal conditions in the application consequently improving the system reliability and lifetime. The higher current capability of the TO-247PLUS allows for reducing the number of devices in parallel thus enabling more compact product designs.

The new package is designed for clip or pressure mounting to the heat sink. These mounting techniques ensure homogeneous distribution of pressure over the package, better heat conductivity and higher mechanical stability even under strong vibrations and mechanical shocks.

Due to the absence of the mounting hole the TO-247PLUS package may accommodate a 70% larger silicon die area compared to standard TO-247. Additionally, the 26% larger thermal pad area contributes up to a 20% lower thermal resistance Rth(jh)compared to standard TO-247. The TO-247PLUS package body has special “plastic trousers” to increase the creepage distance to 4.25mm – 2mm larger than the TO-247-3. The special plastic body compound of the TO-247PLUS package has tighter tolerances to clip pressure while a new bond wiring concept allows a DC collector current increase from 80A to 160A contributing to a better reliability and longer lifetime of the IGBT.

Availability and further information

Samples of the new TO-247PLUS discrete TRENCHSTOP IGBT in 100A and 120A are available today, with volume production scheduled for the first quarter of 2015. Further information on the new TO-247PLUS IGBT is available at www.infineon/TO-247PLUS.
About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2013 fiscal year (ending September 30), the company reported sales of Euro 3.84 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).
 
 
 
» Infineon Technologies
» Press Releases
» Press Release
Date: 24.11.2014 11:15
Number: PR INFIPC201411-011
» Press Photos

 Download der hochauflösenden Version...
Infineon's new TO-247PLUS package enables up to 120A IGBT co-packed with a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3.

 Download der hochauflösenden Version...
» Contacts
Infineon Technologies AG

Media Relations
Tel: +49-89-234-28480
Fax: +49-89-234-9554521
media.relations@infineon.com

Investor Relations:
Tel: +49 89 234-26655
Fax: +49 89 234-9552987
investor.relations@infineon.com
» More Press Releases
26.11.2024 10:15
New EiceDRIVER™ Power family of full-bridge transformer drivers for compact and cost-effective gate driver supplies

21.11.2024 10:15
AURIX™ TC3x from Infineon supports FreeRTOS

20.11.2024 10:15
Dependable power distribution with eFuses: Infineon launches PROFET™ Wire Guard with integrated I²t wire protection

19.11.2024 12:00
Infineon and Quantinuum announce partnership to accelerate quantum computing towards meaningful real-world applications

18.11.2024 14:15
Infineon delivers industry’s first radiation-hardened-by-design 512 Mbit QML-qualified NOR Flash for space industry applications