World’s First One-Chip Multi-Band WCDMA/EDGE Transceiver
Munich, Germany – January 26, 2006 – Infineon Technologies AG (FSE/NYSE: IFX) today announced sample availability of the SMARTi 3GE dual-mode WCDMA/EDGE radio frequency (RF) transceiver. With this newest addition to its successful SMARTi RF transceiver family, Infineon offers the world’s first one-chip, six-band WCDMA (Wideband Code Division Multiple Access) and quad-band EDGE (Enhanced Data GSM Evolution) solution. With over 200 million RF chips sold in 2005, Infineon is the global market leader in RF products for mobile devices.

The SMARTi 3GE is based on the proven architecture of the SMARTi PM, a quad-band GSM/EDGE transceiver, and the SMARTi 3G, a six-band WCDMA transceiver with HSDPA (High-Speed Downlink Packet Access) capabilities. It measures just 6 by 6 square millimeters (0.24 x 0.24 square inches) and frees up more than 40 percent of board space compared to Infineon’s previous two-chip solution, consisting of the currently available SMARTi PM and SMARTi 3G transceivers.

Full software compatibility of the SMARTi 3GE with the two-chip solution offers an extremely smooth transition to the next integration step for all the customers currently working with stand-alone transceivers, thus providing an additional benefit. Moreover, the standard I/Q interface and three-wire bus programming address the majority of available baseband processors.

“With the introduction of the SMARTi 3GE, we offer our customers, for the third time in a row, the most advanced 3G transceiver solution, this time integrating the full dual-mode WCDMA/EDGE functionality into one chip,” said Stefan Wolff, Vice President and General Manager RF Engine at Infineon Technologies. “We continue providing leading-edge RF solutions with the highest levels of integration, enabling our customers to develop best-in-class 2G and 3G handsets.”

SMARTi3 GE handles quad-band GSM/EDGE (850/900/1800/1900 MHz) and currently defined WCDMA bands I through VI, allowing global roaming between Europe, the USA and Japan. The integration of bands II (1900 MHz), IV (1.7/2.1 GHz) and V (850 MHz) is addressing the requirements of the USA market in particular. For emerging data applications, the SMARTi 3GE chip offers data rates as high as 7.2 Mbps in WCDMA downlink by supporting the HSDPA protocol category 8.

Technology

The SMARTi 3GE chip is based on Infineon’s standard 130 nm CMOS RF technology. It is housed in Green (lead-free and halogen-free) leadless packages.

Sample availability

Samples are available now and are already evaluated by several customers. The ramp-up of SMARTi 3GE is scheduled for 4th quarter 2006.
About Infineon

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for automotive, industrial and multimarket sectors, for applications in communication, as well as memory products. With a global presence, Infineon operates through its subsidiaries in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In fiscal year 2005 (ending September), the company achieved sales of Euro 6.76 billion with about 36,400 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at http://www.infineon.com
 
 
 
» Infineon Technologies
» Press Releases
» Press Release
Date: 26.01.2006 15:50
Number: INFCOM200601.028
» Press Photos

 Download der hochauflösenden Version...
The radio frequency transceiver SMARTi 3GE is the world's first one-chip, six-band WCDMA and quad-band EDGE solution. It measures just 6 by 6 square millimeters (0.24 x 0.24 square inches).

 Download der hochauflösenden Version...
The radio frequency transceiver SMARTi 3GE is the world's first one-chip, six-band WCDMA and quad-band EDGE solution. It measures just 6 by 6 square millimeters (0.24 x 0.24 square inches).
» Contacts
Infineon Technologies AG
Media Relations
Tel.: +49-89-234-26341, Fax: -28482
media.relations@infineon.com

Investor Relations:
Tel.: ++49 89 234-26655, Fax: -26155
investor.relations@infineon.com
» More Press Releases
21.11.2024 10:15
AURIX™ TC3x from Infineon supports FreeRTOS

20.11.2024 10:15
Dependable power distribution with eFuses: Infineon launches PROFET™ Wire Guard with integrated I²t wire protection

19.11.2024 12:00
Infineon and Quantinuum announce partnership to accelerate quantum computing towards meaningful real-world applications

18.11.2024 14:15
Infineon delivers industry’s first radiation-hardened-by-design 512 Mbit QML-qualified NOR Flash for space industry applications

13.11.2024 14:15
OptiMOS™ Linear FET 2 MOSFET ermöglicht optimalen Hot-Swap- und Batterieschutz