| ROHM’s New Hybrid IGBTs with Built-In SiC Diode |
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| Achieving lower loss and power consumption while improving cost performance |
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| Willich-Münchheide, Germany, July 19, 2021 – ROHM developed Hybrid IGBTs with integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the AEC-Q101 automotive reliability standard. They are ideal for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEV). (fig. 1) The RGWxx65C series utilizes ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly. Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in industrial and automotive applications. In recent years, global efforts to reduce environmental burden and achieve a carbon-neutral and decarbonized society have spurred the proliferation of electrified vehicles (xEV). At the same time, the diversification of power semiconductors used in various vehicle inverter and converter circuits necessary to configure more efficient systems is currently underway, along with technological innovation of both ultra-low-loss SiC power devices (i.e. SiC MOSFETs, SiC SBDs) and conventional silicon power devices (e.g. IGBTs, Super Junction MOSFETs). To provide effective power solutions for a wide range of applications, ROHM is focusing not only on product and technology development for industry-leading SiC power devices, but for silicon products and driver ICs as well. (fig. 2) Availability: March 2021 (samples), December 2021 (In mass production) Application Examples
(fig.3) In addition to these novel Hybrid IGBTs, we offer products utilizing silicon FRDs as the freewheeling diode as well as products without a freewheeling diode. Click on the URL below for more information. https://www.rohm.com/products/igbt/field-stop-trench-igbt?SearchWord=rgw Design Support Materials A broad range of design data is also available on ROHM’s website, including simulation (SPICE) models and application notes on drive circuit design – necessary for integration and evaluation that supports quick market introduction. Explore additional info here: https://www.rohm.com/products/igbt/field-stop-trench-igbt?PS_BuiltInDiode=SiC-SBD |
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| About ROHM Semiconductor ROHM Semiconductor is a global company of 3.295 billion US dollars per March 31st, 2021 with 22,370 employees. The company develops and manufactures a very large product range from SiC Diodes and MOSFETs, Analog ICs such as Gate Drivers and Power Management ICs to Power Transistors and Diodes to Passive Components. The production of our high performing products is taking place in state-of-the-art manufacturing plants in Japan, Korea, Malaysia, Thailand, the Philippines, and China. LAPIS Technology (former OKI Semiconductor), SiCrystal GmbH and Kionix are companies of the ROHM Semiconductor Group. ROHM Semiconductor Europe has its Head Office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa). For further information, please contact www.rohm.com/eu |
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